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| TLP321, TLP321-2, TLP321-4 HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS APPROVALS l UL recognised, File No. E91231 DESCRIPTION The TLP321, TLP321-2 , TLP321-4 series of optically coupled isolators consist of infrared light emitting diodes and NPN silicon photo transistors in space efficient dual in line plastic packages. FEATURES Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Current Transfer Ratio ( 50% min) l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l High BVCEO ( 80Vmin ) l All electrical parameters 100% tested l Custom electrical selections available APPLICATIONS l Computer terminals l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances l TLP321 2.54 7.0 6.0 1.2 5.08 4.08 1 2 Dimensions in mm 4 3 7.62 4.0 3.0 0.5 13 Max 0.26 3.0 TLP321-2 0.5 2.54 3.35 1 7.0 6.0 2 3 4 7.62 4.0 3.0 0.5 8 7 6 5 1.2 10.16 9.16 3.0 3.35 0.5 13 Max 0.26 1 2 3 4 5 7.0 6.0 6 7 8 7.62 13 Max 0.26 16 15 14 13 12 11 10 9 TLP321-4 2.54 OPTION SM SURFACE MOUNT OPTION G 7.62 1.2 20.32 19.32 4.0 3.0 0.5 3.0 0.5 3.35 0.6 0.1 10.46 9.86 1.25 0.75 0.26 10.16 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 7/12/00 DB92545m-AAS/A1 ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) Storage Temperature -55C to + 125C Operating Temperature -55C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 50mA 6V 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Power Dissipation POWER DISSIPATION Total Power Dissipation (derate linearly 2.67mW/C above 25C) 80V 6V 150mW 200mW ELECTRICAL CHARACTERISTICS ( TA = 25C Unless otherwise noted ) PARAMETER Input Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) MIN TYP MAX UNITS 1.0 5 1.15 1.3 10 V V A V V nA TEST CONDITION IF = 10mA IR = 10A VR = 5V IC = 0.5mA IE = 100A VCE = 48V 5mA IF , 5V VCE 1mA IF , 0.4V VCE 8mA IF , 2.4mA IC 1mA IF , 0.2mA IC See note 1 Output Collector-emitter Breakdown (BVCEO) 80 ( Note 2 ) Emitter-collector Breakdown (BVECO) 6 Collector-emitter Dark Current (ICEO) Current Transfer Ratio (CTR) (Note 2) TLP321, TLP321-2, TLP321-4 CTR selection available GB BL GB Collector-emitter Saturation VoltageVCE (SAT) GB Input to Output Isolation Voltage VISO 50 100 200 30 100 Coupled 600 600 600 0.4 0.4 5300 7500 % % % % V V VRMS VPK s s s s Input-output Isolation Resistance RISO 5x1010 Rise Time tr Fall Time tf Turn-on Time ton Turn-off Time toff 2 3 3 3 VIO = 500V (note 1) VCC = 10V , IC = 2mA, RL = 100 Note 1 Note 2 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. 7/12/00 DB92545m-AAS/A1 Collector Power Dissipation vs. Ambient Temperature 200 Collector power dissipation P C (mW) 25 Collector current I C (mA) 150 20 15 10 5 0 -30 0 25 50 75 100 125 0 Collector Current vs. Low Collector-emitter Voltage TA = 25C 50 40 30 20 10 5 IF = 2mA 100 50 0 Ambient temperature TA ( C ) Forward Current vs. Ambient Temperature 60 0.2 0.4 0.6 0.8 1.0 Collector-emitter voltage VCE ( V ) Collector Current vs. Collector-emitter Voltage 50 50 30 Collector current I C (mA) 40 30 20 10 0 20 15 10 TA = 25C 50 Forward current I F (mA) 40 30 20 10 0 -30 0 25 50 75 100 125 Ambient temperature TA ( C ) Collector-emitter Saturation Voltage vs. Ambient Temperature 0.28 IF = 5mA IC = 1mA Current transfer ratio CTR (%) 0.24 0.20 0.16 0.12 0.08 0.04 0 -30 0 25 50 75 100 Ambient temperature TA ( C ) 7/12/00 IF = 5mA 0 2 4 6 8 10 Collector-emitter voltage VCE ( V ) Current Transfer Ratio vs. Forward Current 320 280 240 200 160 120 80 40 0 1 2 5 10 20 50 Forward current IF (mA) DB92545m-AAS/A1 Collector-emitter saturation voltage V CE(SAT) (V) VCE = 5V TA = 25C |
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